IEEE - Institute of Electrical and Electronics Engineers, Inc. - DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETs

Author(s): Gaspard Hiblot
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 4,015 - 4,018
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2853699
Regular:

In this brief, a new channel length modulation (CLM) extraction method is proposed. The main innovation of this approach is that the extracted value of CLM is not artificially inflated by the... View More

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