IEEE - Institute of Electrical and Electronics Engineers, Inc. - OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET

Author(s): Vishal A. Tiwari ; Rama Divakaruni ; Terence B. Hook ; Deleep R. Nair
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,654 - 3,661
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2858748
Regular:

Parameter variations in the transistor characteristics with new materials and process steps pose an increasing challenge for CMOS scaling to nanometer feature size. Alternate channel materials... View More

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