IEEE - Institute of Electrical and Electronics Engineers, Inc. - “Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Author(s): Manikant Singh ; Michael J. Uren ; Trevor Martin ; Serge Karboyan ; Hareesh Chandrasekar ; Martin Kuball
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,746 - 3,753
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2860902
Regular:

We report on a floating buffer model to explain "kink," a hysteresis in the output characteristics of Fe-doped AlGaN/GaN HEMTs observed at low drain bias. Unintentionally doped background carbon... View More

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