IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems

Author(s): Seokjae Lim ; Myounghoon Kwak ; Hyunsang Hwang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,976 - 3,981
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857494
Regular:

In this paper, we demonstrate the linear conductance-change characteristics of a conductive-bridging RAM (CBRAM) to be employed as an artificial synapse device in neuromorphic systems. The CBRAM... View More

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