IEEE - Institute of Electrical and Electronics Engineers, Inc. - TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective

Author(s): Eddy Simoen ; Barry O'sullivan ; Romain Ritzenthaler ; Eugenio Dentoni Litta ; Tom Schram ; Naoto Horiguchi ; Cor Claeys
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,676 - 3,681
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857849
Regular:

It is shown that replacing a TiN effective work function metal by TaN results in a pronounced reduction of the low-frequency noise power spectral density (PSD) of thick-SiO2... View More

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