IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

Author(s): Majid Shalchian ; Farzan Jazaeri ; Jean-Michel Sallese
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 4,009 - 4,014
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2854905
Regular:

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical... View More

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