IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

Author(s): Nivedita Jaiswal ; Abhinav Kranti
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,669 - 3,675
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2856839
Regular:

This paper proposes a semianalytical model to estimate short-channel effects for independent gate operation in double-gate (DG) junctionless (JL) MOSFET incorporating gate-to-source/drain... View More

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