IEEE - Institute of Electrical and Electronics Engineers, Inc. - Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Author(s): Dian Lei ; Kwang Hong Lee ; Yi-Chiau Huang ; Wei Wang ; Saeid Masudy-Panah ; Sachin Yadav ; Annie Kumar ; Yuan Dong ; Yuye Kang ; Shengqiang Xu ; Ying Wu ; Chuan Seng Tan ; Xiao Gong ; Yee-Chia Yeo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,754 - 3,761
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2856738
Regular:

Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer... View More

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