IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs

Author(s): Mihaela Wolf ; Oliver Hilt ; Joachim Wurfl
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,878 - 3,883
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857848
Regular:

The design and gate-control management of monolithically integrated bidirectional normally OFF GaN-HFET-based switches are presented. Unidirectional 600-V p-GaN-gate HFETs are converted into... View More

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