IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Closed-Form Expression of the Drain Current of Asymmetric Double-Gate OTFTs

Author(s): Luigi Colalongo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,936 - 3,942
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857003
Regular:

A continuous, physically based, and analytic current-voltage ( ${I}$ - ${V}$ ) model of asymmetric independent double-gate organic thin-film transistors is presented. The model is worked out from... View More

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