IEEE - Institute of Electrical and Electronics Engineers, Inc. - Regaining Switching by Overcoming Single-Transistor Latch in Ge Junctionless MOSFETs

Author(s): Manish Gupta ; Abhinav Kranti
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,600 - 3,607
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2851209
Regular:

This paper reports on the suppression of single-transistor latch, an extreme condition of impact ionization (I.I.), in n-type double-gate germanium (Ge) junctionless (JL) transistors. It is shown... View More

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