IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack

Author(s): Vamsi Putcha ; Jacopo Franco ; Abhitosh Vais ; Sonja Sioncke ; Ben Kaczer ; Dimitri Linten ; Guido Groeseneken
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,689 - 3,696
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2851189
Regular:

Operating temperature has a significant imp-act on the reliability of metal-oxide-semiconductor field effect transistors (MOSFETs). In Si-channel MOSFETs, the effective density of charged... View More

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