IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz

Author(s): Nils G. Weimann ; Tom K. Johansen ; Dimitri Stoppel ; Matthias Matalla ; Mohamed Brahem ; Ksenia Nosaeva ; Sebastian Boppel ; Nicole Volkmer ; Ina Ostermay ; Viktor Krozer ; Olivier Ostinelli ; Colombo R. Bolognesi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,704 - 3,710
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2854546
Regular:

We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with... View More

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