IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

Author(s): Akanksha Rawat ; Mudassar Meer ; Vivek kumar Surana ; Navneet Bhardwaj ; Vikas Pendem ; Navya Sri Garigapati ; Yogendra Yadav ; Swaroop Ganguly ; Dipankar Saha
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,725 - 3,731
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857468
Regular:

We have demonstrated the potential use of thermally grown TiO2 and Al2O3 oxides as gate dielectrics for GaN-based high-electron-mobility-transistors.... View More

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