IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001O x ) Interlayer

Author(s): Elif Maril ; Serhat Orkun Tan ; Semsettin Altindal ; Ibrahim Uslu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,901 - 3,908
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2859907
Regular:

Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage ( ${C}/{G}$ - ${V}$ ) measurements... View More

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