IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Different Gate Biases on Irradiation and Annealing Responses of SiC MOSFETs

Author(s): Dongqing Hu ; Jingwei Zhang ; Yunpeng Jia ; Yu Wu ; Ling Peng ; Yun Tang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,719 - 3,724
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2858289
Regular:

The irradiation and postirradiation annealing responses of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated under the application of different positive gate... View More

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