IEEE - Institute of Electrical and Electronics Engineers, Inc. - Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

Author(s): O. Badami ; D. Lizzit ; F. Driussi ; P. Palestri ; D. Esseni
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,646 - 3,653
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857509
Regular:

Tremendous improvements in the fabrication technology have allowed to scale the physical dimensions of the transistors and also to develop different promising 3-D architectures that may allow... View More

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