IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Accurate TCAD-Based Model for ISFET Simulation

Author(s): Ehsan Mohammadi ; Negin Manavizadeh
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,950 - 3,956
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857218
Regular:

In this paper, a new model is successfully introduced to describe an ion-sensitive field-effect transistor in a TCAD tool. To model this device accurately, the model should evaluate surface charge... View More

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