IEEE - Institute of Electrical and Electronics Engineers, Inc. - Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Author(s): Wenjun Liao ; En Xia Zhang ; Michael L. Alles ; Andrew L. Sternberg ; Charles N. Arutt ; Dingkang Wang ; Simeng E. Zhao ; Pan Wang ; Michael W. McCurdy ; Huikai Xie ; Daniel M. Fleetwood ; Robert A. Reed ; Ronald D. Schrimpf
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 2,260 - 2,267
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2853139
Regular:

Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using... View More

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