IEEE - Institute of Electrical and Electronics Engineers, Inc. - Postgrowth Annealing of MOVPE-Grown Single-Crystal CdTe Epilayers on (211) Si Substrates

Author(s): M. Niraula ; K. Yasuda ; J. Ozawa ; T. Yamaguchi ; S. Tsubota ; T. Mori ; Y. Agata
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 2,325 - 2,328
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2855751
Regular:

Effects of cyclic rapid thermal annealing of metalorganic vapor-phase epitaxy grown single-crystal CdTe layers on (211) Si substrates are investigated. Typically, 5- $\mu \text{m}$ -thick CdTe... View More

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