IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Author(s): Kihyun Kim ; Seokjin Hwang ; Hwangseung Yu ; Yoonseok Choi ; Yongsu Yoon ; Aleksey E. Bolotnikov ; Ralph B. James
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 2,333 - 2,337
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2856805
Regular:

The presence of Te secondary-phase defects (i.e., Te inclusions and Te precipitates) is a major factor limiting the performance of CdZnTe (CZT) X-ray and gamma-ray radiation detectors. We find... View More

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