IEEE - Institute of Electrical and Electronics Engineers, Inc. - TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors

Author(s): Qianqiong Wang ; Hongxia Liu ; Shulong Wang ; Shupeng Chen
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 2,250 - 2,259
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2851366
Regular:

Tunnel field-effect transistors (TFETs) have promising structures for future ultrascaled devices thanks to their capability in reducing swing threshold and short channel effects. In this paper,... View More

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