IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs

Author(s): Wang Liao ; Masanori Hashimoto ; Seiya Manabe ; Yukinobu Watanabe ; Shin-Ichiro Abe ; Keita Nakano ; Hikaru Sato ; Tadahiro Kin ; Koji Hamada ; Motonobu Tampo ; Yasuhiro Miyake
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,734 - 1,741
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2825469
Regular:

Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA)... View More

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