IEEE - Institute of Electrical and Electronics Engineers, Inc. - Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation

Author(s): Ling Yang ; Qingzhu Zhang ; Yunbo Huang ; Zhongshan Zheng ; Bo Li ; Binhong Li ; Xingyao Zhang ; Huiping Zhu ; Huaxiang Yin ; Qi Guo ; Jiajun Luo ; Zhengsheng Han
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,503 - 1,510
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2827675
Regular:

The total ionizing dose response of bulk nFinFETs with multiple gate lengths and multiple fins is investigated for on-state bias condition. Experiments and Technology Computer Aided Design... View More

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