IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Impact of Multiple-Cell Charge Generation on Multiple-Cell Upset in a 20-nm Bulk SRAM

Author(s): Takashi Kato ; Takashi Yamazaki ; Kazunori Maruyama ; Takeshi Soeda ; Hiroaki Itsuji ; Daisuke Kobayashi ; Kazuyuki Hirose ; Hideya Matsuyama
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,900 - 1,907
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2830781
Regular:

Single-event upsets induced by multiple-cell charge generation are studied in a 20-nm bulk SRAM by performing laser irradiation tests. The single-pulse two-photon absorption is utilized to... View More

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