IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis and Modeling of the Charge Collection Mechanism in 28-nm FD-SOI

Author(s): V. Correas ; I. Nofal ; J. Cerba ; F. Monsieur ; G. Gasiot ; D. Alexandrescu ; P. Roche ; R. Gonella
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,894 - 1,899
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2828162
Regular:

TCAD simulations on 28-nm fully depleted silicon on insulator structures are used to analyze the charge collection mechanism leading to parasitic current when an ionizing particle passes through... View More

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