IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Author(s): Yang Huang ; Binhong Li ; Xing Zhao ; Zhongshan Zheng ; Jiantou Gao ; Gang Zhang ; Bo Li ; Guohe Zhang ; Kai Tang ; Zhengsheng Han ; Jiajun Luo
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,532 - 1,539
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2824402
Regular:

The existence of buried oxide (BOX) layer and the strong coupling effect between the front and back channels can worsen the radiation-induced degradation on fully depleted silicon-on-insulatorView More

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