IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node

Author(s): H. Zhang ; H. Jiang ; X. Fan ; J. S. Kauppila ; I. Chatterjee ; B. L. Bhuva ; L. W. Massengill
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,928 - 1,934
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2017.2781622
Regular:

Total-ionizing-dose (TID) irradiation affects the single-event (SE) vulnerability of electronics by changing transistor leakage currents and/or effective threshold voltages ( $\text{V}_{T}$ ).... View More

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