IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation

Author(s): R. C. Harrington ; J. A. Maharrey ; J. S. Kauppila ; P. Nsengiyumva ; D. R. Ball ; T. D. Haeffner ; E. X. Zhang ; B. L. Bhuva ; L. W. Massengill
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,807 - 1,813
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2843260
Regular:

Single-event transient (SET) data for the 14-/16-nm bulk finFET technology generation are presented and analyzed for variations in threshold voltage and number of fins in the transistor. The... View More

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