IEEE - Institute of Electrical and Electronics Engineers, Inc. - SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

Author(s): Juan Antonio Clemente ; Guillaume Hubert ; Juan Fraire ; Francisco J. Franco ; Francesca Villa ; Solenne Rey ; Maud Baylac ; Helmut Puchner ; Hortensia Mecha ; Raoul Velazco
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,858 - 1,865
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2800905
Regular:

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations of commercial off-the-shelf static random access memories (SRAMs)... View More

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