IEEE - Institute of Electrical and Electronics Engineers, Inc. - X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices

Author(s): P. F. Wang ; E. X. Zhang ; K. H. Chuang ; W. Liao ; H. Gong ; P. Wang ; C. N. Arutt ; K. Ni ; M. W. Mccurdy ; I. Verbauwhede ; E. Bury ; D. Linten ; D. M. Fleetwood ; R. D. Schrimpf ; R. A. Reed
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,519 - 1,524
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2017.2789160
Regular:

Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2 Mrad(SiO2) show less than 11% change in current... View More

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