IEEE - Institute of Electrical and Electronics Engineers, Inc. - TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

Author(s): J. Riffaud ; M. Gaillardin ; C. Marcandella ; N. Richard ; O. Duhamel ; M. Martinez ; M. Raine ; P. Paillet ; T. Lagutere ; F. Andrieu ; S. Barraud ; M. Vinet ; O. Faynot
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,525 - 1,531
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2850531
Regular:

The total ionizing dose (TID) response of pMOS nanowire field-effect transistors (NWFETs) is investigated using X-ray irradiations. The TID-induced voltage shift is studied using two NWFET widths... View More

Advertisement