IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Author(s): Giulio Borghello ; Federico Faccio ; Edoardo Lerario ; Stefano Michelis ; Szymon Kulis ; Daniel M. Fleetwood ; Ronald D. Schrimpf ; Simone Gerardin ; Alessandro Paccagnella ; Stefano Bonaldo
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,482 - 1,487
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2828142
Regular:

The radiation response of complementary metal-oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is... View More

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