IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Heavy Ion Energy on Charge Yield in Silicon Dioxide

Author(s): Vladimir V. Emeliyanov ; Alexander S. Vatuev ; Rustem G. Useinov
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,496 - 1,502
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2813669
Regular:

The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was... View More

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