IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Author(s): A. L. Bosser ; V. Gupta ; A. Javanainen ; G. Tsiligiannis ; S. D. LaLumondiere ; D. Brewe ; V. Ferlet-Cavrois ; H. Puchner ; H. Kettunen ; T. Gil ; F. Wrobel ; F. Saigne ; A. Virtanen ; L. Dilillo
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Volume: 65
Page(s): 1,708 - 1,714
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2018.2797543
Regular:

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes... View More

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