IEEE - Institute of Electrical and Electronics Engineers, Inc. - Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications

Author(s): Chia-Lung Tsai ; Yi-Chen Lu ; Chih-Min Yu ; Yen-Jen Chen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2861892
Regular:

InGaN light-emitting diodes (LEDs) grown with a thin GaN barrier and a gradually reduced well width in the multiple-quantum-well (MQW) regions close to n-GaN are proposed for use in... View More

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