IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comprehensive Time-Dependent Dielectric Breakdown Lifetime Simulator for Both Traditional CMOS and FinFET Technology

Author(s): Kexin Yang ; Taizhi Liu ; Rui Zhang ; Linda Milor
Sponsor(s): IEEE Computer Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 13
ISSN (Electronic): 1557-9999
ISSN (Paper): 1063-8210
DOI: 10.1109/TVLSI.2018.2861769
Regular:

This paper presents techniques for gate-oxide and middle-of-line (MOL) time-dependent dielectric breakdown (TDDB) lifetime assessment of microprocessors and digital circuits. Both traditional CMOS... View More

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