IEEE - Institute of Electrical and Electronics Engineers, Inc. - Why and how New Japan Radio has continued GaAs RFIC manufacturing in Japan; introduction of unique proven technology based on hetero-junction FET process

Author(s): Shigeki Yamaga ; Hiroyuki Yoshinaga ; Kaoru Miyakoshi ; Masaru Takahashi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-2345
ISSN (Paper): 0894-6507
DOI: 10.1109/TSM.2018.2864973
Regular:

We describe the history of New Japan Radio Co. Ltd., (NJR) and our continuing presence in the business of manufacturing gallium arsenide radio frequency (GaAs RF) front-end devices. We also... View More

Advertisement