IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved distribution of resistance switching through localized Ti-doped NiO layer with InZnOx/CuOx oxide diode

Author(s): Minho Song ; Hyunki Lee ; David H. Seo ; Hyeon-Jun Lee ; June-Seo Kim ; Hui-Sup Cho ; Hong-Kun Lyu ; Sunae Seo ; Myoung-Jae Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2864180
Regular:

Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the... View More

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