IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 800 V Hybrid IGBT Having a High-Speed Internal Diode for Power-Supply Applications

19th International Symposium on Power Semiconductor Devices and Ics

Author(s): S. Kaneko ; H. Yamagiwa ; T. Saji ; T. Uno ; K. Sawada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Jeju Island, South Korea
Conference Date: 27 May 2007
Page(s): 17 - 20
ISBN (CD): 1-4244-1096-7
ISBN (Paper): 1-4244-1095-9
ISSN (Electronic): 1946-0201
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.2007.4294921
Regular:

A new lateral 800 V hybrid IGBT with a high-speed internal diode is proposed for switch-mode power supply (SMPS) applications. The hybrid IGBT operates as a MOS only when the collector/drain... View More

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