IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Author(s): Hao Su ; Hong Wang ; Tao Xu ; Rong Zeng
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Honolulu, HI, USA
Conference Date: 3 June 2007
Page(s): 163 - 166
ISBN (CD): 1-4244-0531-9
ISBN (Paper): 1-4244-0530-0
ISSN (Paper): 1529-2517
DOI: 10.1109/RFIC.2007.380856
Regular:

Impact of hot carrier induced interface damage and its spatial location on RF noise in deep sub-micrometer NMOSFETs is studied A significant increase in minimum noise figure NFmin and... View More

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