IEEE - Institute of Electrical and Electronics Engineers, Inc. - DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

2007 International Conference on Indium Phosphide and Related Materials

Author(s): Jae Yeob Shim ; Hyung Sup Yoon ; Dong Min Kang ; Ju Yeon Hong ; Kyung Ho Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 445 - 446
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381221
Regular:

In this paper T-gate metamorphic high electron mobility transistors with 60 nm gate length has been developed using T-gate lithography process. Electron beam lithography was used to define 60 nm... View More

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