IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of Failure Mechanisms in InP/GaAsSb/InP DHBT Under Bias and Thermal Stress

2007 International Conference on Indium Phosphide and Related Materials

Author(s): B. Grandchamp ; C. Maneux ; N. Labat ; A. Touboul ; P. Bove ; M. Riet ; J. Godin ; A. Scavennec
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 413 - 416
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381212
Regular:

This paper presents results of aging tests performed on InP/GaAsSb/InP HBTs leading to the identification of a typical failure mechanism. Submitted to combined thermal and current stresses, HBTs... View More

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