IEEE - Institute of Electrical and Electronics Engineers, Inc. - InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

2007 International Conference on Indium Phosphide and Related Materials

Author(s): M. Feng ; W. Snodgrass
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 399 - 402
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381208
Regular:

InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving... View More

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