IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition

2007 International Conference on Indium Phosphide and Related Materials

Author(s): Yu Song ; Bing Xiong ; Changzheng Sun ; Yi Luo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 233 - 236
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381166
Regular:

Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating... View More

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