IEEE - Institute of Electrical and Electronics Engineers, Inc. - Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

2007 International Conference on Indium Phosphide and Related Materials

Author(s): Chai Wah Ng ; Hong Wang ; K. Radhakrishnan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 151 - 153
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381146
Regular:

In this work, a detailed study on the surface recombination in InP/InAlAs/GaAsSb/InP DHBTs was carried out. The experimental data clearly reveal that, by using an InP/InAlAs composite... View More

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