IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors

2007 International Conference on Indium Phosphide and Related Materials

Author(s): M. Suhara ; M. Naoi ; N. Matsuzaka ; E. Matsuura ; T. Okumura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 121 - 124
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381138
Regular:

Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB... View More

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