IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters

2007 International Conference on Indium Phosphide and Related Materials

Author(s): H. Murata ; N. Kobayashi ; Y. Okamura ; T. Kosugi ; T. Enoki
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 84 - 86
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381128
Regular:

The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to... View More

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