IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extremely low excess noise InAlAs avalanche photodiodes

2007 International Conference on Indium Phosphide and Related Materials

Author(s): C.H. Tan ; Y.L. Goh ; A.R.J. Marshall ; L.J.J. Tan ; J.S. Ng ; J.P.R. David
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 81 - 83
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.381127
Regular:

Excess noise factors <4 at avalanche gain of 10 measured on a series of p+in+ InAlAs diodes with avalanche regions ranging from 0.11μm to 2.53μm. Extremely low... View More

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