IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

2007 International Conference on Indium Phosphide and Related Materials

Author(s): P.H. Liu ; W. Yoshida ; J. Lee ; L. Dang ; J. Wang ; W. Liu ; J. Uyeda ; D. Li ; X.B. Mei ; W. Deal ; M. Barsky ; Y.M. Kim ; M. Lange ; T.P. Chin ; V. Radisic ; T. Gaier ; A. Fung ; R. Lai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Matsue, Japan
Conference Date: 14 May 2007
Page(s): 22 - 23
ISBN (CD): 1-4244-0875-X
ISBN (Paper): 1-4244-0874-1
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2007.380679
Regular:

We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source... View More

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